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Dynamic dV/dt Rating IRFP240PBF Power Mosfet Transistor Fast switching power mosfet

Anterwell Technology Ltd.

Dynamic dV/dt Rating IRFP240PBF Power Mosfet Transistor Fast switching power mosfet

Brand Name : Anterwell

Model Number : IRFP240PBF

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 9500pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Drain-Source Voltage : 200 V

Gate-Source Voltage : ± 20 V

Pulsed Drain Current : 80 A

Linear Derating Factor : 1.2 W/°C

Single Pulse Avalanche Energy : 510 mJ

Maximum Power Dissipation : 150 W

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IRFP240, SiHFP240

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

Dynamic dV/dt Rating IRFP240PBF Power Mosfet Transistor Fast switching power mosfet

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS ± 20 V
Continuous Drain Current VGS at 10 V TC = 25 °C ID 20 A
TC = 100 °C 12
Pulsed Drain Currenta IDM 80 A
Linear Derating Factor 1.2 W/°C
Single Pulse Avalanche Energyb EAS 510 mJ
Repetitive Avalanche Currenta IAR 20 A
Repetitive Avalanche Energya EAR 15 mJ
Maximum Power Dissipation TC = 25 °C PD 150 W
Peak Diode Recovery dV/dtc dV/dt 5.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C
Soldering Recommendations (Peak Temperature) for 10 s 300d °C
Mounting Torque 6-32 or M3 screw 10 lbf · in
1.1 N · m

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 50 V, starting TJ = 25 °C, L = 1.9 mH, RG = 25 Ω, IAS = 20 A (see fig. 12).

c. ISD ≤ 18 A, dI/dt ≤ 150 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

Stock Offer (Hot Sell)

Part No. Quantity Brand D/C Package
LM211P 13049 TI 11+ TSSOP-8
LM224DR 67000 TI 16+ SOP-14
LM22676MRE-5.0 8568 TI 15+ SOP-8
LM22676MRX-5.0 8639 TI 15+ PSOP8
LM22676MRX-ADJ 1691 TI 16+ SOP-8
LM22676TJE-ADJ 6794 TI 13+ TO-263
LM22777TJ-ADJ 5048 NS 16+ TO-263
LM239APT 4458 ST 13+ TSSOP-14
LM25011MY/NOPB 3243 TI 16+ MSOP-10
LM25037MTX 4474 TI 09+ TSSOP-16
LM25119PSQ/NOPB 1820 TI 15+ WQFN-32
LM25575MHX 3711 TI 12+ TSSOP-16
LM25576MHX 5141 TI 14+ TSSOP-20
LM2575D2T-3.3R4G 18153 ON 11+ TO-263
LM2575HVT-5.0 13120 NS 15+ TO-220
LM2575SX-5.0 22261 NS 16+ TO-263
LM2576-5.0WU 4267 MICREL 14+ TO-263
LM2576D2TR4-5G 5273 ON 14+ TO-263
LM2576HVSX-ADJ 6468 TI 15+ TO-263
LM2576HVT-ADJ 21640 NS 16+ TO-220
LM2576SX-1.2 18871 NSC 13+ TO263-5
LM2577T-ADJ 4542 NS 12+ TO-220-5
LM2586SX-ADJ 2498 NS 07+ TO-263-7
LM2588T-5.0 3655 TI 15+ TO-220-7
LM258DR 69000 TI 16+ SOP-8
LM258DT 70000 ST 13+ SOP-8
LM2594HVM-5.0 3314 NS 13+ SOP-8
LM2596HVT-ADJ 21711 NS 14+ TO-220
LM2622MM-ADJ 2888 NSC 08+ MSOP-8
LM2651MTCX-ADJ 8710 NS 04+ TSSOP


Product Tags:

multi emitter transistor

      

silicon power transistors

      
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